「半導體(ti)專題講座」芯片測試（Test）

4. 電氣參數與過程(cheng)參數的聯動

電(dian)氣參(can)數中(zhong)重(zhong)要(yao)(yao)的參(can)數是電(dian)流(liu)(liu)（其次依次為(wei)門檻電(dian)壓、切換時間）.例(li)如，如果我們研究(jiu)驅動電(dian)流(liu)(liu)與過程變量(liang)(liang)(liang)的關聯關系(xi)，技術升級(ji)（ex.12納米到7納米）意味(wei)著(zhu)線(xian)寬(kuan)細(xi)化(hua)（這(zhe)意味(wei)著(zhu)澆口的長度(du)/寬(kuan)度(du)和(he)通(tong)(tong)道(dao)的長度(du)/寬(kuan)度(du)縮小(xiao)(xiao)(xiao)），這(zhe)意味(wei)著(zhu)必(bi)須縮小(xiao)(xiao)(xiao)通(tong)(tong)道(dao)截面積（相(xiang)對于長度(du)而言，截面積影響(xiang)更大(da)），即電(dian)子(zi)在源端(duan)(duan)和(he)直通(tong)(tong)端(duan)(duan)之間的通(tong)(tong)道(dao)。當(dang)過程變量(liang)(liang)(liang)縮小(xiao)(xiao)(xiao)時，漏(lou)極(ji)電(dian)流(liu)(liu)（Id）就(jiu)會減(jian)少(shao)，所以(yi)重(zhong)新設置縮小(xiao)(xiao)(xiao)漏(lou)極(ji)電(dian)流(liu)(liu)的Spec Limit以(yi)適應線(xian)寬(kuan)。在這(zhe)種情(qing)況下，如果需要(yao)(yao)維持一定的電(dian)流(liu)(liu)值(zhi)(zhi)，而不能根據工藝(yi)變量(liang)(liang)(liang)調整電(dian)參(can)數值(zhi)(zhi)或(huo)(huo)相(xiang)反地減(jian)小(xiao)(xiao)(xiao)值(zhi)(zhi)，則需要(yao)(yao)調整工藝(yi)變量(liang)(liang)(liang)的濃度(du)變量(liang)(liang)(liang)，以(yi)提高源/進端(duan)(duan)子(zi)形成時離子(zi)注(zhu)入過程的陽離子(zi)度(du)量(liang)(liang)(liang)。與電(dian)流(liu)(liu)一樣(yang)，電(dian)容(rong)值(zhi)(zhi)或(huo)(huo)電(dian)阻值(zhi)(zhi)與電(dian)壓相(xiang)關，也會得到反饋的DC/AC測量(liang)(liang)(liang)值(zhi)(zhi)，以(yi)重(zhong)新調整過程變量(liang)(liang)(liang)或(huo)(huo)重(zhong)新設定規格的極(ji)限值(zhi)(zhi)。因此，電(dian)氣參(can)數值(zhi)(zhi)與過程變量(liang)(liang)(liang)緊密相(xiang)關。關于半導體工藝(yi)這(zhe)點你要(yao)(yao)知道(dao) (5)擴散(Diffusion) 工藝(yi)。惠州78FBGA-0.8P導電(dian)膠

「半導體專題(ti)講(jiang)座(zuo)」芯片測試（Test）

在半導(dao)體后(hou)工序中進行的(de)(de)測試(shi)（Test）是指通過電氣特性(xing)（ElectricalCharacteristics）檢查，防止芯片（Chip）的(de)(de)不(bu)良進入下一道工序，從而將損失降至比(bi)較低(di)的(de)(de)過程(cheng)。初的(de)(de)測試(shi)對批量生產(chan)的(de)(de)產(chan)品(pin)進行不(bu)良（長久錯誤(wu)）的(de)(de)過濾(lv)為主，但目(mu)前其(qi)作用逐漸擴大，如提(ti)前杜絕(jue)可靠(kao)性(xing)不(bu)良、提(ti)高(gao)良率、降低(di)成本(ben)、幫助產(chan)品(pin)研(yan)發等。本(ben)文我們將詳細(xi)介(jie)紹半導(dao)體的(de)(de)測試(shi)工藝(yi)。

1. 半導體測試工藝FLOW

半導(dao)體測試(shi)工(gong)藝FLOW為驗證(zheng)每道工(gong)序是否正確執行半導(dao)體將在室溫（25攝氏度）下(xia)進(jin)行測試(shi)。

測試(shi)主(zhu)要包括Wafer Test、封裝測試(shi)、 模(mo)組(zu)測試(shi)。江蘇導電膠(jiao)按需定制關于半導體(ti)工(gong)藝(yi)(yi)，這點(dian)你要知道：（2）氧化（Oxidation）工(gong)藝(yi)(yi)。

「半(ban)導體(ti)(ti)工程」半(ban)導體(ti)(ti)？這點應該(gai)知道：（8）Wafer測試&打包工程

封裝（Packaging）工藝？

如果將封(feng)裝(zhuang)（Packaging）工藝(yi)進(jin)一步細分，可以分為封(feng)裝(zhuang)工藝(yi)和封(feng)裝(zhuang)測試工藝(yi)。半導體芯片(pian)作為電子設(she)備的(de)組件，必須安裝(zhuang)在必要的(de)位(wei)置，因此(ci)必須封(feng)裝(zhuang)成合適的(de)形狀。確保外部電源和輸入輸出信號電流流動，并(bing)確保半導體芯片(pian)不(bu)受(shou)外部影響。

封裝工藝的八個步驟

圓(yuan)晶片變成小半導體芯片會(hui)經(jing)歷(li)各(ge)種各(ge)樣(yang)的(de)過(guo)程，那我們(men)再來(lai)了解一下封裝過(guo)程中的(de)各(ge)個(ge)過(guo)程吧？

Burn-in Board（測(ce)試燒入機）測(ce)試儀器(qi)配(pei)件——探針

RollingPinandFingerPin此(ci)探針可解決一(yi)(yi)般探針的(de)電性問(wen)題(ti)，提(ti)高接(jie)觸壽命，以(yi)及減少沾錫狀況所(suo)發(fa)生的(de)電抗問(wen)題(ti)。革恩半導體使(shi)用的(de)rollingpin不(bu)同于一(yi)(yi)般rollingpinsocket使(shi)用塑料制成(cheng)，我們采用全(quan)金屬制造，此(ci)做法可提(ti)供更(geng)電性及散熱(re)需求，以(yi)及大幅降低IC以(yi)及LoadBoard的(de)刮(gua)傷(shang)。並且(qie)已有(you)年多的(de)實(shi)際應用。

革恩業務領域：

1. 測試設備

01. 基于英特(te)爾平(ping)臺開發DDR及(ji)(ji)LPDDR顆(ke)粒及(ji)(ji)模組測試(shi)儀器，并(bing)可根據客戶需(xu)求進行(xing)固 件及(ji)(ji)軟件調(diao)試(shi)

02. 基于MTK平臺(tai)開(kai)發LPDDR、EMMC、UFS測試(shi)儀器(qi)，并(bing)可根據(ju)客戶(hu)需求進行(xing)固件及(ji)(ji)軟件調試(shi)現有(you)P60、P90、G90、20M、21M平臺(tai)測試(shi)儀器(qi)已開(kai)發完成(cheng)及(ji)(ji)開(kai)發中03.高低溫(wen)測試(shi)設(she)備(bei)(bei)及(ji)(ji)量產設(she)備(bei)(bei)

2. Burn-in Board(測(ce)試(shi)(shi)燒入機(ji)）測(ce)試(shi)(shi)儀器(qi)配件－導電膠、測(ce)試(shi)(shi)座子、探針測(ce)試(shi)(shi)存儲設備(bei)的(de)大小和測(ce)試(shi)(shi)數量(liang)，還可以測(ce)試(shi)(shi)可讀和寫的(de)速度。

關(guan)于半導體工藝(yi)，這點你要知(zhi)道：（2）氧化（Oxidation）工藝(yi)

上節給大家介紹了半導體八大工(gong)(gong)(gong)序中的(de)(de)道(dao)工(gong)(gong)(gong)序“晶(jing)圓工(gong)(gong)(gong)序”。小編就給大家介紹一下這(zhe)樣辛(xin)苦制作的(de)(de)保護(hu)晶(jing)圓表面的(de)(de)工(gong)(gong)(gong)藝(yi)——“氧化工(gong)(gong)(gong)藝(yi)”。

1、什么是氧化工(gong)藝？

首(shou)先要(yao)知(zhi)道氧(yang)化(hua)工(gong)藝是什么(me)意思吧？所謂“氧(yang)化(hua)工(gong)藝”，是指在硅（Si）基片(pian)上提供氧(yang)化(hua)劑(ji)（水（H2O）、氧(yang)（O2））和熱能，形(xing)成二氧(yang)化(hua)硅（SiO2）膜的(de)(de)工(gong)藝。此(ci)時形(xing)成的(de)(de)氧(yang)化(hua)膜不僅可(ke)(ke)以(yi)防止(zhi)電(dian)路和電(dian)路之(zhi)間(jian)的(de)(de)泄漏電(dian)流流動，還(huan)可(ke)(ke)以(yi)起(qi)到(dao)防止(zhi)離子注入工(gong)序擴散(san)的(de)(de)作(zuo)(zuo)用，以(yi)及防止(zhi)蝕(shi)(shi)刻工(gong)序中錯誤地(di)被蝕(shi)(shi)刻的(de)(de)防蝕(shi)(shi)刻膜的(de)(de)作(zuo)(zuo)用。就像這樣可(ke)(ke)以(yi)得到(dao)各種(zhong)各樣的(de)(de)保護晶片(pian)。如果(guo)你對(dui)“氧(yang)化(hua)”的(de)(de)理解有(you)困難，可(ke)(ke)以(yi)考慮鐵（Fe）生銹的(de)(de)現象。導(dao)電(dian)膠(jiao)內存測試(shi)墊(dian)片(pian)，ddr測試(shi)導(dao)電(dian)膠(jiao),芯片(pian)導(dao)電(dian)膠(jiao),導(dao)電(dian)膠(jiao)測試(shi)底座,專(zhuan)業研發(fa)生產(chan)廠。惠州78FBGA-0.8P導(dao)電(dian)膠(jiao)

半導體在晶片狀態下完成(cheng)后不會直接封裝，這會造(zao)成(cheng)很(hen)大問(wen)題，因為(wei)在包裝好的產(chan)品會參雜次(ci)品。惠州78FBGA-0.8P導電(dian)膠

什(shen)么是探(tan)針（又名Pogo針或彈簧探(tan)針）？

用于測試產品的探針

探(tan)針(zhen)(zhen)(zhen)也(ye)被(bei)稱為pogo針(zhen)(zhen)(zhen)或(huo)彈(dan)簧(huang)探(tan)針(zhen)(zhen)(zhen)。它旨在測(ce)試兩個(ge)電路板與(yu)待(dai)測(ce)設(she)備或(huo)設(she)備之間的(de)(de)連接(jie)。高(gao)性能(neng)應用需要非常(chang)精確的(de)(de)探(tan)針(zhen)(zhen)(zhen)設(she)計。

找到一(yi)個低(di)穩定的(de)電阻或(huo)長壽(shou)命的(de)彈簧(huang)探頭(tou)

無(wu)論(lun)是(shi)進行工程測(ce)試還(huan)是(shi)批量(liang)生產(chan)測(ce)試，對(dui)于確保它們(men)在多種條件下順利運行至(zhi)關重要。如果(guo)對(dui)探針解(jie)決方案感興趣(qu)，無(wu)論(lun)是(shi)小批量(liang)還(huan)是(shi)大(da)量(liang)，都可以解(jie)決。

革恩半導(dao)體(ti)業(ye)務(wu)領域：1. 測(ce)(ce)試(shi)(shi)設備(bei)01. 基于英(ying)特爾平(ping)(ping)臺(tai)開發(fa)DDR及(ji)LPDDR顆(ke)粒(li)及(ji)模組測(ce)(ce)試(shi)(shi)儀(yi)器，并可根(gen)據(ju)客戶(hu)需求進行固(gu) 件(jian)及(ji)軟(ruan)件(jian)調試(shi)(shi)02. 基于MTK平(ping)(ping)臺(tai)開發(fa)LPDDR、EMMC、UFS測(ce)(ce)試(shi)(shi)儀(yi)器，并可根(gen)據(ju)客戶(hu)需求進行固(gu)件(jian)及(ji)軟(ruan)件(jian)調試(shi)(shi)現(xian)有P60、P90、G90、20M、21M平(ping)(ping)臺(tai)測(ce)(ce)試(shi)(shi)儀(yi)器已開發(fa)完成(cheng)及(ji)開發(fa)中03.高低溫測(ce)(ce)試(shi)(shi)設備(bei)及(ji)量產設備(bei)2. Burn-in Board(測(ce)(ce)試(shi)(shi)燒入機）測(ce)(ce)試(shi)(shi)儀(yi)器配件(jian)－導(dao)電膠、測(ce)(ce)試(shi)(shi)座子(zi)、探針04.DDR測(ce)(ce)試(shi)(shi)、導(dao)電膠芯片測(ce)(ce)試(shi)(shi)、技術服(fu)(fu)務(wu)支(zhi)持、支(zhi)持研發(fa)服(fu)(fu)務(wu)惠州78FBGA-0.8P導(dao)電膠

深(shen)圳(zhen)市(shi)(shi)革(ge)恩(en)(en)半導(dao)(dao)(dao)體(ti)(ti)有(you)限公司位(wei)于(yu)深(shen)圳(zhen)市(shi)(shi)寶(bao)安區(qu)(qu)(qu)西鄉(xiang)街道桃源(yuan)社(she)區(qu)(qu)(qu)臣田航城工業(ye)(ye)區(qu)(qu)(qu)A1棟305南邊，是一家專(zhuan)業(ye)(ye)的(de)(de)(de)革(ge)恩(en)(en)半導(dao)(dao)(dao)體(ti)(ti)業(ye)(ye)務(wu)領(ling)域：1. 測(ce)(ce)(ce)(ce)(ce)試(shi)(shi)(shi)(shi)(shi)(shi)(shi)(shi)(shi)(shi)(shi)(shi)(shi)設(she)(she)備(bei)(bei)01. 基(ji)(ji)于(yu)英(ying)特(te)爾平(ping)(ping)臺開(kai)(kai)發(fa)(fa)(fa)DDR及(ji)(ji)(ji)LPDDR顆(ke)(ke)粒(li)(li)及(ji)(ji)(ji)模組(zu)測(ce)(ce)(ce)(ce)(ce)試(shi)(shi)(shi)(shi)(shi)(shi)(shi)(shi)(shi)(shi)(shi)(shi)(shi)儀器(qi)(qi)(qi)，并(bing)可根(gen)(gen)據(ju)客(ke)(ke)戶需求(qiu)(qiu)進(jin)行固(gu) 件(jian)(jian)(jian)(jian)(jian)(jian)(jian)及(ji)(ji)(ji)軟(ruan)(ruan)件(jian)(jian)(jian)(jian)(jian)(jian)(jian)調(diao)試(shi)(shi)(shi)(shi)(shi)(shi)(shi)(shi)(shi)(shi)(shi)(shi)(shi)02. 基(ji)(ji)于(yu)MTK平(ping)(ping)臺開(kai)(kai)發(fa)(fa)(fa)LPDDR、EMMC、UFS測(ce)(ce)(ce)(ce)(ce)試(shi)(shi)(shi)(shi)(shi)(shi)(shi)(shi)(shi)(shi)(shi)(shi)(shi)儀器(qi)(qi)(qi)，并(bing)可根(gen)(gen)據(ju)客(ke)(ke)戶需求(qiu)(qiu)進(jin)行固(gu)件(jian)(jian)(jian)(jian)(jian)(jian)(jian)及(ji)(ji)(ji)軟(ruan)(ruan)件(jian)(jian)(jian)(jian)(jian)(jian)(jian)調(diao)試(shi)(shi)(shi)(shi)(shi)(shi)(shi)(shi)(shi)(shi)(shi)(shi)(shi)現有(you)P60、P90、G90、20M、21M平(ping)(ping)臺測(ce)(ce)(ce)(ce)(ce)試(shi)(shi)(shi)(shi)(shi)(shi)(shi)(shi)(shi)(shi)(shi)(shi)(shi)儀器(qi)(qi)(qi)已開(kai)(kai)發(fa)(fa)(fa)完成及(ji)(ji)(ji)開(kai)(kai)發(fa)(fa)(fa)中03.高(gao)低(di)溫(wen)測(ce)(ce)(ce)(ce)(ce)試(shi)(shi)(shi)(shi)(shi)(shi)(shi)(shi)(shi)(shi)(shi)(shi)(shi)設(she)(she)備(bei)(bei)及(ji)(ji)(ji)量(liang)產(chan)設(she)(she)備(bei)(bei)2. Burn-in Board(測(ce)(ce)(ce)(ce)(ce)試(shi)(shi)(shi)(shi)(shi)(shi)(shi)(shi)(shi)(shi)(shi)(shi)(shi)燒入機）測(ce)(ce)(ce)(ce)(ce)試(shi)(shi)(shi)(shi)(shi)(shi)(shi)(shi)(shi)(shi)(shi)(shi)(shi)儀器(qi)(qi)(qi)配件(jian)(jian)(jian)(jian)(jian)(jian)(jian)－導(dao)(dao)(dao)電膠(jiao)、測(ce)(ce)(ce)(ce)(ce)試(shi)(shi)(shi)(shi)(shi)(shi)(shi)(shi)(shi)(shi)(shi)(shi)(shi)座子(zi)(zi)、探(tan)針04.DDR測(ce)(ce)(ce)(ce)(ce)試(shi)(shi)(shi)(shi)(shi)(shi)(shi)(shi)(shi)(shi)(shi)(shi)(shi)、導(dao)(dao)(dao)電膠(jiao)芯片(pian)測(ce)(ce)(ce)(ce)(ce)試(shi)(shi)(shi)(shi)(shi)(shi)(shi)(shi)(shi)(shi)(shi)(shi)(shi)、技(ji)(ji)術(shu)服(fu)(fu)務(wu)支(zhi)(zhi)持(chi)(chi)(chi)、支(zhi)(zhi)持(chi)(chi)(chi)研發(fa)(fa)(fa)服(fu)(fu)務(wu)公司。GN是深(shen)圳(zhen)市(shi)(shi)革(ge)恩(en)(en)半導(dao)(dao)(dao)體(ti)(ti)有(you)限公司的(de)(de)(de)主營品牌，是專(zhuan)業(ye)(ye)的(de)(de)(de)革(ge)恩(en)(en)半導(dao)(dao)(dao)體(ti)(ti)業(ye)(ye)務(wu)領(ling)域：1. 測(ce)(ce)(ce)(ce)(ce)試(shi)(shi)(shi)(shi)(shi)(shi)(shi)(shi)(shi)(shi)(shi)(shi)(shi)設(she)(she)備(bei)(bei)01. 基(ji)(ji)于(yu)英(ying)特(te)爾平(ping)(ping)臺開(kai)(kai)發(fa)(fa)(fa)DDR及(ji)(ji)(ji)LPDDR顆(ke)(ke)粒(li)(li)及(ji)(ji)(ji)模組(zu)測(ce)(ce)(ce)(ce)(ce)試(shi)(shi)(shi)(shi)(shi)(shi)(shi)(shi)(shi)(shi)(shi)(shi)(shi)儀器(qi)(qi)(qi)，并(bing)可根(gen)(gen)據(ju)客(ke)(ke)戶需求(qiu)(qiu)進(jin)行固(gu) 件(jian)(jian)(jian)(jian)(jian)(jian)(jian)及(ji)(ji)(ji)軟(ruan)(ruan)件(jian)(jian)(jian)(jian)(jian)(jian)(jian)調(diao)試(shi)(shi)(shi)(shi)(shi)(shi)(shi)(shi)(shi)(shi)(shi)(shi)(shi)02. 基(ji)(ji)于(yu)MTK平(ping)(ping)臺開(kai)(kai)發(fa)(fa)(fa)LPDDR、EMMC、UFS測(ce)(ce)(ce)(ce)(ce)試(shi)(shi)(shi)(shi)(shi)(shi)(shi)(shi)(shi)(shi)(shi)(shi)(shi)儀器(qi)(qi)(qi)，并(bing)可根(gen)(gen)據(ju)客(ke)(ke)戶需求(qiu)(qiu)進(jin)行固(gu)件(jian)(jian)(jian)(jian)(jian)(jian)(jian)及(ji)(ji)(ji)軟(ruan)(ruan)件(jian)(jian)(jian)(jian)(jian)(jian)(jian)調(diao)試(shi)(shi)(shi)(shi)(shi)(shi)(shi)(shi)(shi)(shi)(shi)(shi)(shi)現有(you)P60、P90、G90、20M、21M平(ping)(ping)臺測(ce)(ce)(ce)(ce)(ce)試(shi)(shi)(shi)(shi)(shi)(shi)(shi)(shi)(shi)(shi)(shi)(shi)(shi)儀器(qi)(qi)(qi)已開(kai)(kai)發(fa)(fa)(fa)完成及(ji)(ji)(ji)開(kai)(kai)發(fa)(fa)(fa)中03.高(gao)低(di)溫(wen)測(ce)(ce)(ce)(ce)(ce)試(shi)(shi)(shi)(shi)(shi)(shi)(shi)(shi)(shi)(shi)(shi)(shi)(shi)設(she)(she)備(bei)(bei)及(ji)(ji)(ji)量(liang)產(chan)設(she)(she)備(bei)(bei)2. Burn-in Board(測(ce)(ce)(ce)(ce)(ce)試(shi)(shi)(shi)(shi)(shi)(shi)(shi)(shi)(shi)(shi)(shi)(shi)(shi)燒入機）測(ce)(ce)(ce)(ce)(ce)試(shi)(shi)(shi)(shi)(shi)(shi)(shi)(shi)(shi)(shi)(shi)(shi)(shi)儀器(qi)(qi)(qi)配件(jian)(jian)(jian)(jian)(jian)(jian)(jian)－導(dao)(dao)(dao)電膠(jiao)、測(ce)(ce)(ce)(ce)(ce)試(shi)(shi)(shi)(shi)(shi)(shi)(shi)(shi)(shi)(shi)(shi)(shi)(shi)座子(zi)(zi)、探(tan)針04.DDR測(ce)(ce)(ce)(ce)(ce)試(shi)(shi)(shi)(shi)(shi)(shi)(shi)(shi)(shi)(shi)(shi)(shi)(shi)、導(dao)(dao)(dao)電膠(jiao)芯片(pian)測(ce)(ce)(ce)(ce)(ce)試(shi)(shi)(shi)(shi)(shi)(shi)(shi)(shi)(shi)(shi)(shi)(shi)(shi)、技(ji)(ji)術(shu)服(fu)(fu)務(wu)支(zhi)(zhi)持(chi)(chi)(chi)、支(zhi)(zhi)持(chi)(chi)(chi)研發(fa)(fa)(fa)服(fu)(fu)務(wu)公司，擁(yong)有(you)自己的(de)(de)(de)技(ji)(ji)術(shu)體(ti)(ti)系。公司以用心服(fu)(fu)務(wu)為重點價值(zhi)，希望通(tong)過我們的(de)(de)(de)專(zhuan)業(ye)(ye)水平(ping)(ping)和(he)不(bu)懈努力，將革(ge)恩(en)(en)半導(dao)(dao)(dao)體(ti)(ti)業(ye)(ye)務(wu)領(ling)域：1. 測(ce)(ce)(ce)(ce)(ce)試(shi)(shi)(shi)(shi)(shi)(shi)(shi)(shi)(shi)(shi)(shi)(shi)(shi)設(she)(she)備(bei)(bei)01. 基(ji)(ji)于(yu)英(ying)特(te)爾平(ping)(ping)臺開(kai)(kai)發(fa)(fa)(fa)DDR及(ji)(ji)(ji)LPDDR顆(ke)(ke)粒(li)(li)及(ji)(ji)(ji)模組(zu)測(ce)(ce)(ce)(ce)(ce)試(shi)(shi)(shi)(shi)(shi)(shi)(shi)(shi)(shi)(shi)(shi)(shi)(shi)儀器(qi)(qi)(qi)，并(bing)可根(gen)(gen)據(ju)客(ke)(ke)戶需求(qiu)(qiu)進(jin)行固(gu) 件(jian)(jian)(jian)(jian)(jian)(jian)(jian)及(ji)(ji)(ji)軟(ruan)(ruan)件(jian)(jian)(jian)(jian)(jian)(jian)(jian)調(diao)試(shi)(shi)(shi)(shi)(shi)(shi)(shi)(shi)(shi)(shi)(shi)(shi)(shi)02. 基(ji)(ji)于(yu)MTK平(ping)(ping)臺開(kai)(kai)發(fa)(fa)(fa)LPDDR、EMMC、UFS測(ce)(ce)(ce)(ce)(ce)試(shi)(shi)(shi)(shi)(shi)(shi)(shi)(shi)(shi)(shi)(shi)(shi)(shi)儀器(qi)(qi)(qi)，并(bing)可根(gen)(gen)據(ju)客(ke)(ke)戶需求(qiu)(qiu)進(jin)行固(gu)件(jian)(jian)(jian)(jian)(jian)(jian)(jian)及(ji)(ji)(ji)軟(ruan)(ruan)件(jian)(jian)(jian)(jian)(jian)(jian)(jian)調(diao)試(shi)(shi)(shi)(shi)(shi)(shi)(shi)(shi)(shi)(shi)(shi)(shi)(shi)現有(you)P60、P90、G90、20M、21M平(ping)(ping)臺測(ce)(ce)(ce)(ce)(ce)試(shi)(shi)(shi)(shi)(shi)(shi)(shi)(shi)(shi)(shi)(shi)(shi)(shi)儀器(qi)(qi)(qi)已開(kai)(kai)發(fa)(fa)(fa)完成及(ji)(ji)(ji)開(kai)(kai)發(fa)(fa)(fa)中03.高(gao)低(di)溫(wen)測(ce)(ce)(ce)(ce)(ce)試(shi)(shi)(shi)(shi)(shi)(shi)(shi)(shi)(shi)(shi)(shi)(shi)(shi)設(she)(she)備(bei)(bei)及(ji)(ji)(ji)量(liang)產(chan)設(she)(she)備(bei)(bei)2. Burn-in Board(測(ce)(ce)(ce)(ce)(ce)試(shi)(shi)(shi)(shi)(shi)(shi)(shi)(shi)(shi)(shi)(shi)(shi)(shi)燒入機）測(ce)(ce)(ce)(ce)(ce)試(shi)(shi)(shi)(shi)(shi)(shi)(shi)(shi)(shi)(shi)(shi)(shi)(shi)儀器(qi)(qi)(qi)配件(jian)(jian)(jian)(jian)(jian)(jian)(jian)－導(dao)(dao)(dao)電膠(jiao)、測(ce)(ce)(ce)(ce)(ce)試(shi)(shi)(shi)(shi)(shi)(shi)(shi)(shi)(shi)(shi)(shi)(shi)(shi)座子(zi)(zi)、探(tan)針04.DDR測(ce)(ce)(ce)(ce)(ce)試(shi)(shi)(shi)(shi)(shi)(shi)(shi)(shi)(shi)(shi)(shi)(shi)(shi)、導(dao)(dao)(dao)電膠(jiao)芯片(pian)測(ce)(ce)(ce)(ce)(ce)試(shi)(shi)(shi)(shi)(shi)(shi)(shi)(shi)(shi)(shi)(shi)(shi)(shi)、技(ji)(ji)術(shu)服(fu)(fu)務(wu)支(zhi)(zhi)持(chi)(chi)(chi)、支(zhi)(zhi)持(chi)(chi)(chi)研發(fa)(fa)(fa)服(fu)(fu)務(wu)等(deng)業(ye)(ye)務(wu)進(jin)行到底。深(shen)圳(zhen)市(shi)(shi)革(ge)恩(en)(en)半導(dao)(dao)(dao)體(ti)(ti)有(you)限公司主營業(ye)(ye)務(wu)涵蓋(gai)芯片(pian)導(dao)(dao)(dao)電膠(jiao)測(ce)(ce)(ce)(ce)(ce)試(shi)(shi)(shi)(shi)(shi)(shi)(shi)(shi)(shi)(shi)(shi)(shi)(shi)墊片(pian)，DDR測(ce)(ce)(ce)(ce)(ce)試(shi)(shi)(shi)(shi)(shi)(shi)(shi)(shi)(shi)(shi)(shi)(shi)(shi)、LPDDR測(ce)(ce)(ce)(ce)(ce)，內存(cun)測(ce)(ce)(ce)(ce)(ce)試(shi)(shi)(shi)(shi)(shi)(shi)(shi)(shi)(shi)(shi)(shi)(shi)(shi)儀器(qi)(qi)(qi)，內存(cun)顆(ke)(ke)粒(li)(li)內存(cun)條測(ce)(ce)(ce)(ce)(ce)試(shi)(shi)(shi)(shi)(shi)(shi)(shi)(shi)(shi)(shi)(shi)(shi)(shi)，堅持(chi)(chi)(chi)“質量(liang)保證、良好服(fu)(fu)務(wu)、顧客(ke)(ke)滿意(yi)”的(de)(de)(de)質量(liang)方針，贏得廣大客(ke)(ke)戶的(de)(de)(de)支(zhi)(zhi)持(chi)(chi)(chi)和(he)信賴(lai)。

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